AP13268877 “Development of Technology for Manufacturing Radiation-Resistant Electronic Components for Artificial Earth Satellites”
Scientific Supervisor: Almasov Nurlan Zhumabekovich
Competition Name: Ministry of Science and Higher Education of the Republic of Kazakhstan, Grant Funding Program for Young Scientists “Zhas Galym”, 2022–2024 (32 months)
Competition Name: Ministry of Science and Higher Education of the Republic of Kazakhstan, Grant Funding Program for Young Scientists “Zhas Galym”, 2022–2024 (32 months)
Project Objective
To develop a technology for manufacturing non-volatile memory devices of the PCRAM type based on the chalcogenide glassy semiconductor Ge₂Sb₂Te₅ by identifying the dependencies of switching effect parameters in these materials on local structure and external influences, using computer modeling in DFT and AIMD environments, as well as implementing the model technologically through epitaxial growth.
Project Tasks
— Development of a computer model of the local atomic structure and phase transformations in the Ge₂Sb₂Te₅ system;
— Optimization of the technology for obtaining epitaxial layers of Ge₂Sb₂Te₅ using pulsed laser deposition;
— Study of the composition and structure of Ge₂Sb₂Te₅ films using TEM, SEM, AFM, and Raman spectroscopy;
— Investigation of optical and electrical properties of Ge₂Sb₂Te₅ films and determination of their electronic parameters;
— Study of the switching effect in thin films of Ge₂Sb₂Te₅;
— Fabrication of a PCRAM prototype based on thin epitaxial Ge₂Sb₂Te₅ films.
— Optimization of the technology for obtaining epitaxial layers of Ge₂Sb₂Te₅ using pulsed laser deposition;
— Study of the composition and structure of Ge₂Sb₂Te₅ films using TEM, SEM, AFM, and Raman spectroscopy;
— Investigation of optical and electrical properties of Ge₂Sb₂Te₅ films and determination of their electronic parameters;
— Study of the switching effect in thin films of Ge₂Sb₂Te₅;
— Fabrication of a PCRAM prototype based on thin epitaxial Ge₂Sb₂Te₅ films.
Expected Results
The structural parameters of stable and metastable phases of Ge₂Sb₂Te₅ will be determined. The electrical conductivity and current–voltage characteristics (I–V curves) of both crystalline and amorphous phases of GST will be measured. One article will be published in a peer-reviewed international or national journal recommended by the Committee for Quality Assurance in Science and Higher Education of the Republic of Kazakhstan.
The parameters of the pulsed laser deposition process ensuring the growth of epitaxial Ge₂Sb₂Te₅ layers will be determined. The atomic structure of epitaxial Ge₂Sb₂Te₅ layers will be studied. The electronic parameters of these layers will be established. A patent or copyright certificate of the Republic of Kazakhstan will be obtained.
One article will be published in a peer-reviewed scientific journal indexed in the Science Citation Index Expanded (Web of Science) and/or with a CiteScore percentile of at least 35 in the Scopus database. Additionally, one article will be published in a national journal recommended by the Committee for Quality Assurance in Science and Higher Education of the Republic of Kazakhstan. The switching parameters of epitaxial Ge₂Sb₂Te₅ layers will be determined. Another article will be published in a peer-reviewed scientific journal indexed in Web of Science and/or Scopus (percentile ≥ 35).
The parameters of the pulsed laser deposition process ensuring the growth of epitaxial Ge₂Sb₂Te₅ layers will be determined. The atomic structure of epitaxial Ge₂Sb₂Te₅ layers will be studied. The electronic parameters of these layers will be established. A patent or copyright certificate of the Republic of Kazakhstan will be obtained.
One article will be published in a peer-reviewed scientific journal indexed in the Science Citation Index Expanded (Web of Science) and/or with a CiteScore percentile of at least 35 in the Scopus database. Additionally, one article will be published in a national journal recommended by the Committee for Quality Assurance in Science and Higher Education of the Republic of Kazakhstan. The switching parameters of epitaxial Ge₂Sb₂Te₅ layers will be determined. Another article will be published in a peer-reviewed scientific journal indexed in Web of Science and/or Scopus (percentile ≥ 35).
Project Implementation Stages
Calendar Plan Section: No. 1
Development of a computer model of the local atomic structure and phase transformations in the Ge₂Sb₂Te₅ system:
— Ab initio DFT calculations using VIENNA AB INITIO SIMULATION (VASP);
— Ab initio molecular dynamics (AIMD) calculations of transport properties of ultrathin GST films in metastable cubic and amorphous phases.
Development of a computer model of the local atomic structure and phase transformations in the Ge₂Sb₂Te₅ system:
— Ab initio DFT calculations using VIENNA AB INITIO SIMULATION (VASP);
— Ab initio molecular dynamics (AIMD) calculations of transport properties of ultrathin GST films in metastable cubic and amorphous phases.
Research Team
Nurlan Zhumabekovich Almasov, Project Leader, PhD, h-index: 2, Scopus Author ID / ORCID: https://orcid.org/0000-0003-2183-3389
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